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Proceedings Paper

A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver
Author(s): Hailin Cui; Shouli Zhou; Hui Huang; Yongqing Huang; Xiaomin Ren
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Paper Abstract

Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

Paper Details

Date Published: 2 December 2005
PDF: 7 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602025 (2 December 2005); doi: 10.1117/12.636315
Show Author Affiliations
Hailin Cui, Beijing Univ. of Posts and Telecommunications (China)
Shouli Zhou, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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