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Proceedings Paper

High-output very small aperture laser and its near-field distribution properties
Author(s): Qiaoqiang Gan; Suofeng Song; Lianghui Chen
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Paper Abstract

A Very-Small-Aperture Laser with a 250X500 nm2 aperture has been created on a 650nm edge emitting LD. The highest far-field output power is 1.9mW and the power per unit emission area is about 15mW/μm2. The special fabrication process and high output power mechanism are demonstrated respectively. The near-field distribution properties are also analyzed theoretically and experimentally.

Paper Details

Date Published: 5 December 2005
PDF: 7 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200L (5 December 2005); doi: 10.1117/12.635973
Show Author Affiliations
Qiaoqiang Gan, Institute of Semiconductors (China)
Chinese Academy of Sciences (China)
Suofeng Song, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)

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