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Proceedings Paper

Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors
Author(s): Changling Yan; Jingchang Zhong; Xiaohua Wang; Yingjie Zhao; Yongqin Hao; Yuan Feng
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Paper Abstract

We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR), and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs, the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment, this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum, the central wavelength is about 980 nm with high reflectivity.

Paper Details

Date Published: 8 December 2005
PDF: 7 pages
Proc. SPIE 6021, Optical Transmission, Switching, and Subsystems III, 60214D (8 December 2005); doi: 10.1117/12.635616
Show Author Affiliations
Changling Yan, Changchun Institute of Optics, Fine Mechanics, and Physics, CAS (China)
Jingchang Zhong, Changchun Univ. of Science and Technology (China)
Xiaohua Wang, Changchun Univ. of Science and Technology (China)
Yingjie Zhao, Changchun Univ. of Science and Technology (China)
Yongqin Hao, Changchun Univ. of Science and Technology (China)
Yuan Feng, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6021:
Optical Transmission, Switching, and Subsystems III
Rodney S. Tucker; Dominique Chiaroni; Wanyi Gu; Ken-ichi Kitayama, Editor(s)

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