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Proceedings Paper

Electric field effect in GaInAs/InP quantum wire and quantum box structures and application to intersectional optical switch
Author(s): K. G. Ravikumar; Takuya Aizawa; Masahiro Asada; Yasuharu Suematsu
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Paper Abstract

Large electric field induced refractive index variation and large index variation absorption loss variation ratio in low fundamental absorption region are theoretically reported in a GaInAs/InP quantum box (QB) structure. This effect is shown to be applicable to low loss intersectional type optical switch. Moreover the Q B size dependence as well as fluctuations in QB size on QB-intersectional type optical switch was also discussed. As a first step towards the realization of such high-dimensional structure we have fabricated and measured the index variation in a GaInAs/InP multi-layered ( 3layers) quantum wire structure. The measured index variation was around 4 at an applied reverse bias voltage of 3V. I.

Paper Details

Date Published: 16 December 1992
PDF: 5 pages
Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); doi: 10.1117/12.635244
Show Author Affiliations
K. G. Ravikumar, Fujikura Ltd. (Japan)
Takuya Aizawa, Tokyo Institute of Technology (Japan)
Masahiro Asada, Tokyo Institute of Technology (Japan)
Yasuharu Suematsu, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 1622:
Emerging Optoelectronic Technologies
Krishna Shenai; Ananth Selvarajan; C. Kumar N. Patel; C. N. R. Rao; B. S. Sonde; Vijai K. Tripathi, Editor(s)

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