Proceedings Paper
High-performance strain-compensated InGaAsN quantum-well ridge waveguide lasers| Format | Member Price | Non-Member Price |
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Paper Abstract
High power InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition (MOCVD) were fabricated with pulsed anodic oxidation. A maximum light power output of 304 mW was obtained from a 10-μm stripe width uncoated laser diode in continuous wave (CW) mode at room temperature. The characteristic temperature of the lasers was 138 K.
Paper Details
Date Published: 5 December 2005
PDF: 4 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200G (5 December 2005); doi: 10.1117/12.634897
Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)
PDF: 4 pages
Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60200G (5 December 2005); doi: 10.1117/12.634897
Show Author Affiliations
Yi Qu, Changchun Univ. of Science and Technology (China)
Nanyang Technological Univ. (Singapore)
Jing Zhang, Changchun Univ. of Science and Technology (China)
Hui Li, Changchun Univ. of Science and Technology (China)
Xin Gao, Changchun Univ. of Science and Technology (China)
Nanyang Technological Univ. (Singapore)
Jing Zhang, Changchun Univ. of Science and Technology (China)
Hui Li, Changchun Univ. of Science and Technology (China)
Xin Gao, Changchun Univ. of Science and Technology (China)
Published in SPIE Proceedings Vol. 6020:
Optoelectronic Materials and Devices for Optical Communications
Shinji Tsuji; Jens Buus; Yi Luo, Editor(s)
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