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Proceedings Paper

Measurement of MEMS structures microshiftings by holographic interferometry with increased sensitivity
Author(s): Nikita N. Balan; Vladislav G. Rodin; Sergey N. Starikov
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Paper Abstract

Last years MEMS (Micro Electro Mechanical Systems) technology is fast developing area of engineering. Mechanical constants of the materials used in deveices created on this technology depend on the technological processes at their production. Therefore the great importance to a quality monitoring of parameters of MEMS-devices is given. There is a necessity for creation of setups for non-invasively measuring of objects microshiftings to within tens nanometers. The pupose of the present work is application of holographic interferometry with increased sensitivity methods, based on using of the nonlinear effects, for measurement of MEMS-devices elements microshiftings. The proposed technique consists of several steps. On first step microshiftings of objects are recorded on the couble exposure hologram. Further the reconstruction image is photographed on another plate. This plate can be presumed to be an equivalent of a nonlinear hologram. Finally at illumination of this plate one can observed the interferention of higher harmonics. Using the obtained interferogram it is possible to determine of test objects microshiftings with the increased sensitivity. After measurement of microshiftings of special test objets under known loadings it is possible to calculate values of material elastic constants. Features of the method proposed in the present work consist in its comparative simplicity, multifunctionality and high sensitivity to measurement of microshiftings (up to 1/16 of a wavelength of light used at illumination). Theoretical calculations and preliminary experiment results have demonstrated that by means of such mehtod it is possible to measure microshiftings of diffusely reflecting objets with submicron sensitivity.

Paper Details

Date Published: 8 June 2005
PDF: 8 pages
Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634385
Show Author Affiliations
Nikita N. Balan, Moscow Engineering Physics Institute (Russia)
Vladislav G. Rodin, Moscow Engineering Physics Institute (Russia)
Sergey N. Starikov, Moscow Engineering Physics Institute (Russia)

Published in SPIE Proceedings Vol. 5851:
Fundamental Problems of Optoelectronics and Microelectronics II
Yuri N. Kulchin; Oleg B. Vitrik; Vladimir I. Stroganov, Editor(s)

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