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Proceedings Paper

Electron Phonon Scattering and Phonon Conductivity in As—Doped Germanium
Author(s): M. K. Roy; K. N. Sood
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Paper Abstract

Our recently derived expressions for the electron-phonon (e-p) interaction relaxation rates have been appleid to the explanation of phonon conductivity of As-doped Ge beyond conductivity maximum. Due to the added role of dilatation deformation potential, Ed, in e-p relaxation rates we have been able to explain the phonon conductivity of As-doped Ge at higher temperatures for the first time.

Paper Details

Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634085
Show Author Affiliations
M. K. Roy, Banaras Hindu University (India)
K. N. Sood, Banaras Hindu University (India)


Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)

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