
Proceedings Paper
Electron Phonon Scattering and Phonon Conductivity in As—Doped GermaniumFormat | Member Price | Non-Member Price |
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Paper Abstract
Our recently derived expressions for the electron-phonon
(e-p) interaction relaxation rates have been appleid to the
explanation of phonon conductivity of As-doped Ge beyond
conductivity maximum. Due to the added role of dilatation
deformation potential, Ed, in e-p relaxation rates we have been
able to explain the phonon conductivity of As-doped Ge at higher
temperatures for the first time.
Paper Details
Date Published: 1 February 1992
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634085
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
PDF: 3 pages
Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634085
Show Author Affiliations
M. K. Roy, Banaras Hindu University (India)
K. N. Sood, Banaras Hindu University (India)
Published in SPIE Proceedings Vol. 1523:
Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits
B. S. V. Gopalam; J. Majhi, Editor(s)
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