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Proceedings Paper

Fabrication of mesoporous silica for ultra-low-k interlayer dielectrics
Author(s): Nobutoshi Fujii; Kazuo Kohmura; Takahiro Nakayama; Hirofumi Tanaka; Nobuhiro Hata; Yutaka Seino; Takamaro Kikkawa
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Paper Abstract

We have developed sol-gel self-assembly techniques to control the pore structure and diameter of ultra-low-k interlayer dielectric (ILD) films. Porous silica films have been fabricated using cationic and nonionic surfactants as templates, resulting in 2D-hexagonal and disordered pore structures, respectively. The disordered mesoporous silica film has a worm-hole like network of pore channels having a uniform diameter. Precursors of the mesoporous silica films were synthesized by use of tetraethyl-orthosilicate (TEOS), inorganic acid, water, ethanol and various surfactants. The surfactants used were cationic alkyltrimethyl-ammonium (ATMA) chloride surfactants for 2D-hexagonal pores and nonionic tri-block copolymer for disordered structures. Dimethyldiethoxysilane (DMDEOS) was added for forming the disordered mesoporous silica. The disordered cylindrical pore structure with a uniform pore size was fabricated by controlling the static electrical interaction between the surfactant and the silica oligomer with methyl group of DMDEOS. Tetramethylcycrotetrasiloxane (TMCTS) vapor treatment was developed, which improved the mechanical strength of mesoporous silica films. The TMCTS polymer covered the pore wall surface and cross-linked to passivate the mechanical defects in the silica wall. Significant enhancement of mechanical strength was demonstrated by TMCTS vapor treatment. The porous silica film modified with a catalyst and a plasma treatment achieved higher mechanical strength and lower dielectric constant than conventional porous silica films because the TMCTS vapor treatment was more effective for mechanical reinforcement and hydrophobicity.

Paper Details

Date Published: 16 November 2005
PDF: 9 pages
Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020N (16 November 2005); doi: 10.1117/12.633597
Show Author Affiliations
Nobutoshi Fujii, MIRAI-ASET (Japan)
Kazuo Kohmura, MIRAI-ASET (Japan)
Takahiro Nakayama, MIRAI-ASET (Japan)
Hirofumi Tanaka, MIRAI-ASET (Japan)
Nobuhiro Hata, MIRAI-ASRC-AIST (Japan)
Yutaka Seino, MIRAI-ASRC-AIST (Japan)
Takamaro Kikkawa, MIRAI-ASRC-AIST (Japan)
Hiroshima Univ. (Japan)

Published in SPIE Proceedings Vol. 6002:
Nanofabrication: Technologies, Devices, and Applications II
Warren Y.-C. Lai; Leonidas E. Ocola; Stanley Pau, Editor(s)

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