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Proceedings Paper

Overview of CMOS process and design options for image sensor dedicated to space applications
Author(s): P. Martin-Gonthier; P. Magnan; F. Corbiere
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Paper Abstract

With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

Paper Details

Date Published: 21 October 2005
PDF: 11 pages
Proc. SPIE 5978, Sensors, Systems, and Next-Generation Satellites IX, 597812 (21 October 2005);
Show Author Affiliations
P. Martin-Gonthier, SUPAERO-Integrated Image Sensors Lab. (France)
P. Magnan, SUPAERO-Integrated Image Sensors Lab. (France)
F. Corbiere, SUPAERO-Integrated Image Sensors Lab. (France)

Published in SPIE Proceedings Vol. 5978:
Sensors, Systems, and Next-Generation Satellites IX
Roland Meynart; Steven P. Neeck; Haruhisa Shimoda, Editor(s)

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