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Proceedings Paper

Advanced photomask repair technology for 65nm lithography (4)
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Osamu Suga; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida
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Paper Abstract

Since 2001, we have been improving the hp65nm generation photomask repairing systems, the SIR7000. FIB repair stains quartz substrate with Ga ions. We process the repaired area using two parameters: edge bias and over-etching depth to recover transmission loss. The simulation shows that smaller over-etching makes the lithography process window larger. The dependence of Ga density in quartz with on FIB acceleration voltages shows that the Ga-doped area is smaller according as acceleration voltage is lower. It is found that the over-etching depth should be below 15nm, and a new FIB repairing system should have a low acceleration column. In order to confirm the effect of low acceleration voltage, we investigated the transmittance and the over-etching depth as a feasibility study. As the result, lower acceleration voltage repair gives higher transmittance and lower over-etching depth. We confirmed that the FIB with low acceleration voltage is the most promising technology for the hp65nm generation photomask repairing.

Paper Details

Date Published: 8 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924Y (8 November 2005); doi: 10.1117/12.632756
Show Author Affiliations
Yasutoshi Itou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Haruo Takahashi, SII NanoTechnology Inc. (Japan)
Osamu Takaoka, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Syuichi Kikuchi, SII NanoTechnology Inc. (Japan)
Atsushi Uemoto, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Naoki Nishida, HOYA Co. (Japan)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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