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Proceedings Paper

Enhanced resist and etch CD control by design perturbation
Author(s): Puneet Gupta; Andrew B. Kahng; Chul-Hong Park
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Paper Abstract

Etch dummy features are used in the mask data preparation flow to reduce critical dimension (CD) skew between resist and etch processes and improve the printability of layouts. However, etch dummy rules conflict with SRAF (Sub-Resolution Assist Feature) insertion because each of the two techniques requires specific spacings of poly-to-assist, assist-to-assist, active-to-etch dummy and dummy-to-dummy. In this work, we first present a novel SRAF-aware etch dummy insertion method (SAEDM) which optimizes etch dummy insertion to make the layout more conducive to assist-feature insertion after etch dummy features have been inserted. However, placed standard-cell layouts may not have the ideal whitespace distribution to allow for optimal etch dummy and assist-feature insertions. Since placement of cells can create forbidden pitch violations, the placer must generate assist-correct and etch dummy-correct placements. This can be achieved by intelligent whitespace management in the placer. We describe a novel dynamic programming-based technique for etch-dummy correctness (EtchCorr) which can be combine with the SAEDM in detailed placement of standard-cell designs. Our algorithm is validated on industrial testcases with respect to wafer printability, database complexity and device performance.

Paper Details

Date Published: 8 November 2005
PDF: 11 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923P (8 November 2005); doi: 10.1117/12.632753
Show Author Affiliations
Puneet Gupta, Blaze DFM, Inc. (United States)
Andrew B. Kahng, Blaze DFM, Inc. (United States)
Univ. of California at San Diego (United States)
Chul-Hong Park, Univ. of California at San Diego (United States)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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