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Proceedings Paper

Evaluation of quartz dry etching performance for next generation phase-shift mask applications
Author(s): S. A. Anderson; T. Konishi; R. Koch; S. Yokoi; A. Kumar; I. Ibrahim
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Paper Abstract

The photomask industry is constantly reaching towards next-generation technology that can advance today's semi-conductor applications. One of the most successful and widely used techniques for advancing the current lithography capability and meeting many of the next-generation requirements is through the use of phase-shifting photomasks (PSM). Resolution enhancements techniques implemented through the use of PSMs can be a powerful tool in meeting both today's and tomorrow's demanding lithographic requirements. For this work, effects of changing etch process parameters on the quartz dry-etching process performance is investigated. Considerations are given to phase depth uniformity, sidewall profile and reactive ion etch lag in the analysis of the quartz etch performance.

Paper Details

Date Published: 4 November 2005
PDF: 9 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920Q (4 November 2005); doi: 10.1117/12.632559
Show Author Affiliations
S. A. Anderson, Applied Materials, Inc. (United States)
T. Konishi, Toppan Printing Co., Ltd. (Japan)
R. Koch, Applied Materials, Inc. (United States)
S. Yokoi, Applied Materials, Inc. (United States)
A. Kumar, Applied Materials, Inc. (United States)
I. Ibrahim, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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