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Proceedings Paper

Pattern type specific modeling and correction methodology at high NA and off-axis illumination
Author(s): Sungsoo Suh; Young-seog Kang; In-sung Kim; Sang-gyun Woo; Hanku Cho; Joo-tae Moon
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Paper Abstract

In this work, a potential drawback of simultaneously representing a set of data that contains line-ends, isobar, block structure, and pitch linearity intensity signal using a single representative model have been resolved. In a typical model-OPC procedure, a set of pattern data representative of OPC layout is calibrated using a single representative model, and this model may be a scalar or a vector at constant threshold or variable threshold. Nevertheless, traditional methodology treats a set of pattern data as a whole believing that it provides a best representation of a more complicated environment. In this study, pattern type specific models are used to perform optical proximity correction. This multi-model approach distinguishes each pattern type and specified pitch range a priori to obtaining intensity signal by checking for neighboring segment. Based on this search result, its segment is classified into a pattern type and sub-group, and then, pattern specific models are applied. This approach provides improved calibration result for strong off-axis illumination and optical proximity correction result which will be difficult to achieve with a single representative model.

Paper Details

Date Published: 5 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599220 (5 November 2005); doi: 10.1117/12.632376
Show Author Affiliations
Sungsoo Suh, Samsung Electronics Co., Ltd. (South Korea)
Young-seog Kang, Samsung Electronics Co., Ltd. (South Korea)
In-sung Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-tae Moon, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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