Share Email Print

Proceedings Paper

The detectability of Qz phase defects and its application for 65nm node CPL mask manufacturing
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

RET (Resolution Enhancement Technique) is strongly required for 65nm node pattern generation. Alternating Phase Shift Masks (APSM) and Chrome-less Phase Lithography (CPL) masks are widely used for the purpose of RET. However, APSM and CPL mask manufacturing is rather complex and difficult in terms of their structure and fabrication. To inspect these kind of RET masks is very difficult because of quartz (Qz) phase defects which can hardly be detected by using a conventional inspection method. Since Qz phase defect is the key issue in APSM or CPL mask manufacturing, many works have been done widely so far. Here we've evaluated the defocus inspection method to find best inspection condition for detecting Qz phase defects. We conclude that the best condition for finding Qz phase defects could have dependency upon the pattern shape and size. Moreover, the limitation of the inspection capability for Qz phase defect inspection has been addressed with comparison of the wafer print result.

Paper Details

Date Published: 4 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599205 (4 November 2005); doi: 10.1117/12.632335
Show Author Affiliations
Won Il Cho, Samsung Electronics Co., Ltd. (South Korea)
Jin Hyung Park, Samsung Electronics Co., Ltd. (South Korea)
Dong Hoon Chung, Samsung Electronics Co., Ltd. (South Korea)
Sung Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo Sung Han, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?