Optical Proximity Correction (OPC) improves image fidelity by adding and subtracting small enhancement shapes from the original pattern data. Although the presence of these small shapes improves the final wafer image quality, it causes an increase in total figure count, longer fracture processing time, and the introduction of sliver figures. These undesirable artifacts can have a negative impact on the mask write time and mask image quality. In this paper we outline alternative OPC treatments which reduce the additional figures produced, and make the layout configurations friendlier to the subsequent mask fabrication phase. These include the alignment of neighboring small shapes during the OPC operation, and the preservation of jog alignment during the biasing phase. Illustrations of example pattern data, and improvement results in terms of figure counts are described.

Date Published: 5 November 2005
PDF: 7 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599222 (5 November 2005); doi: 10.1117/12.632220

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)