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Proceedings Paper

Haze defect control and containment in a high volume DRAM manufacturing environment
Author(s): Jerry X. Chen; Maihan Nguyen; Osamu Arasaki; Tammy Maraquin; Daniel Sawyer; Pedro Morrison
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Paper Abstract

Haze and other progressive reticle defects have been known in the semiconductor industry for more than a decade [1]. Extensive research and experiments have been carried out to determine the sources and origins of the progressive haze growth, but the true mechanisms of its cause are still under speculation. To minimize the wafer yield loss at Samsung Austin Semiconductor (SAS), we introduced a practical method to control the haze defects in a DRAM manufacturing environment that integrates reticle and wafer inspections, reticle cleaning, and a dose-based and time-based control forecast software system. This development has been proven to be very effective in controlling the haze defects and reducing the related yield loss while still supporting high volume wafer production.

Paper Details

Date Published: 8 November 2005
PDF: 11 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923I (8 November 2005); doi: 10.1117/12.632188
Show Author Affiliations
Jerry X. Chen, Samsung Austin Semiconductor (United States)
Maihan Nguyen, Samsung Austin Semiconductor (United States)
Osamu Arasaki, Samsung Austin Semiconductor (United States)
Tammy Maraquin, Samsung Austin Semiconductor (United States)
Daniel Sawyer, Samsung Austin Semiconductor (United States)
Pedro Morrison, Samsung Austin Semiconductor (United States)


Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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