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Proceedings Paper

Antireflection solutions for next generation 193-nm binary and phase-shifting masks
Author(s): Hans Becker; Markus Renno; Ulrich Hermanns; Holger Seitz; Ute Buttgereit; Konrad Knapp; Günter Hess
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Paper Abstract

Reflections occur at every interface of a mask and are known as flare. Flare effects have a negative impact on the resist exposure at the wafer level. In this paper total antireflection (AR) solutions are presented to eliminate flare effects at mask level. These are next generation binary and phase shifting mask blanks, where AR coatings are effective not only on top of the absorber, but also eliminate internal as well as back side reflections. Substrate reflection can be reduced both internally and externally by an order of magnitude to below 0.5%. Internal (backside) reflection of a binary chrome or a phase shifting layer are reduced from about 40% to below 0.1%. Reflection in the etched area is also addressed and reduced by an order of magnitude. A sophisticated absorber AR coating is presented, where reflection at 193 nm lithography can be reduced to zero while at the same time reflection at 257 nm inspection wavelength is tuned to the maximum sensitivity range of 7% to 20%.

Paper Details

Date Published: 4 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59920I (4 November 2005); doi: 10.1117/12.632113
Show Author Affiliations
Hans Becker, Schott Lithotec AG (Germany)
Markus Renno, Schott Lithotec AG (Germany)
Ulrich Hermanns, Schott Lithotec AG (Germany)
Holger Seitz, Schott Lithotec AG (Germany)
Ute Buttgereit, Schott Lithotec AG (Germany)
Konrad Knapp, Schott Lithotec AG (Germany)
Günter Hess, Schott Lithotec AG (Germany)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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