Chemically amplified resists, CAR, and 50kV e-beam writers have been applied for the most advance mask manufacturing. To fulfill the requirement of 65nm generation a good performance resist played an important role. In this work, two advanced positive and negative CAR resist has been evaluated for 65nm photomask process with a 50kV e-beam pattern generator in an advanced process line. For 65nm node not only the resolution is needed to be improved but also the cirtical dimension(CD) control will be more critical than previous generation. So the evaluation is focus on the CD performance, resolution, profile, e-beam sensitivity, line edge roughness(LER), etc.

Date Published: 8 November 2005
PDF: 6 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923B (8 November 2005); doi: 10.1117/12.632052

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)