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Proceedings Paper

Image enhancement technology to get fine defect image for FIB
Author(s): Yongkyoo Choi; Heecheon Kim; Oscar Han
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Paper Abstract

As current feature size on mask is under the wave length of inspection source, it is difficult to distinguish a defect where it is on or from, even though high NA optic lens is used. The disadvantage of this hi-res defect detection method require review step which spend much of inspection time. So this lack of resolution of optical inspection tool requires new review tools such as SEM (Second electron Beam Microscope) or FIB(Focused Ion Beam). As the image of ion beam generally shows speckle noise, we adapted anisotropic nonlinear diffusion technology to remove noise without loss of pattern, by different diffusion along pattern edge. And a fine defect image by image processing to repair was extracted to replace the pattern copy function of FIB.

Paper Details

Date Published: 4 November 2005
PDF: 8 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59921C (4 November 2005); doi: 10.1117/12.632027
Show Author Affiliations
Yongkyoo Choi, Hynix Semiconductor (South Korea)
Heecheon Kim, Hynix Semiconductor (South Korea)
Oscar Han, Hynix Semiconductor (South Korea)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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