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Proceedings Paper

Determination of mask layer stress by placement metrology
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Paper Abstract

The present paper will show an approach for a local and global stress determination by the application of a Leica LMS IPRO II mask registration tool. Changes in placement due to a full or partial layer removal on single materials as well as material stacks with respect to a reference grid were determined. Simulation using finite element modeling was conducted to calculate stress values from the placement information. Finally, an estimate was made of the acceptable stress level for a sample design to meet placement requirements for future lithography nodes.

Paper Details

Date Published: 8 November 2005
PDF: 12 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59923U (8 November 2005); doi: 10.1117/12.631526
Show Author Affiliations
Jörg Butschke, IMS Chips (Germany)
Ute Buttgereit, SCHOTT Lithotec AG (Germany)
Eric Cotte, Advanced Mask Technology Ctr. GmbH (Germany)
Günter Hess, SCHOTT Lithotec AG (Germany)
Mathias Irmscher, IMS Chips (Germany)
Holger Seitz, SCHOTT Lithotec AG (Germany)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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