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Proceedings Paper

Ultra-narrow width air-gap Si FET integrated with micro-fluidic delivery for charge based sensing
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Paper Abstract

An ultra-narrow width silicon field effect transistor (FET) with a suspended gate, integrated with on-chip microfluidic delivery system is described. The device is designed to be used as an FET based sensor for sequencing of DNA, RNA and proteins, by detecting the local charge variations along the chains of these molecules as they are passed between the gate and the channel of the FET in an aqueous solution. A side-gated FET structure is demonstrated with sub-10 nm width, successfully suppressing the electrical leakage currents at the device edges. Side-gated FET structure allows electrostatic confinement of the electrons in the channel for increased spatial resolution.

Paper Details

Date Published: 17 November 2005
PDF: 11 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 600818 (17 November 2005); doi: 10.1117/12.630905
Show Author Affiliations
Ali Gokirmak, Cornell Univ. (United States)
Sandip Tiwari, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)

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