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Proceedings Paper

Growth and characterization of single crystal semiconductor Ga2O3 nanowires and nano-ribbons for sensing applications
Author(s): S. M. Prokes; W. E. Carlos; O. J. Glembocki
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Paper Abstract

The growth of monoclinic Ga2O3 nanowires, nano-ribbons and nano-sheets has been investigated. Results indicate that high quality single crystal nanowires can be grown at 900°C using an Au catalyst, while single crystal nano-ribbons and nano-sheets require no metal catalyst for growth. Since bulk Ga2O3 is a promising material for high temperature sensing, Ga2O3 nanowires and nano-ribbons may prove to enhance the sensing capability due to the high surface area. We have investigated the nature of defects in this material using Electron Spin Resonance, in as grown material, as well as under annealing in a reducing gas (H2) at various high temperatures. Results indicate the presence of an oxygen deficiency in the material, resulting in a conduction electron signal that becomes enhanced with annealing. An alternate use of these nanowires for sensing applications will also be presented, involving Surface Enhanced Raman Spectroscopy.

Paper Details

Date Published: 17 November 2005
PDF: 10 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080C (17 November 2005); doi: 10.1117/12.630644
Show Author Affiliations
S. M. Prokes, U.S. Naval Research Lab. (United States)
W. E. Carlos, U.S. Naval Research Lab. (United States)
O. J. Glembocki, U.S. Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)

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