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Proceedings Paper

An InAs/GaAs quantum dot long-wave infrared photodetector with high photodectivity at 180K
Author(s): Xuejun Lu
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Paper Abstract

We present an InAs/GaAs quantum dot long wave infrared photodetector based on nonlinear photocurrent generation process. A dark current suppression factor of over 104 is obtained at 180K. Photocurrent generation process was simulated and compared with conventional linear absorption photocurrent generation. A photodetectivity of nearly 1010cmHz1/2/W were obtained at 180K. This kind long wave infrared photodetector is promising in working at air-cooled temperature.

Paper Details

Date Published: 17 November 2005
PDF: 10 pages
Proc. SPIE 6008, Nanosensing: Materials and Devices II, 60080S (17 November 2005); doi: 10.1117/12.630204
Show Author Affiliations
Xuejun Lu, Univ. of Massachusetts, Lowell (United States)

Published in SPIE Proceedings Vol. 6008:
Nanosensing: Materials and Devices II
M. Saif Islam; Achyut K. Dutta, Editor(s)

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