Three stencil masks with simple die layouts on 24 mm x 24 mm Si membranes are made to compare simulation and experiment on image placement (IP). A pseudo finite element (FE) modeling is adopted. Displacements predicted by simulation are found to be smaller than experimental values, but both agree qualitatively. Four stencil masks with die layouts that model on ULSI hole layers in 30% opening ratio and pattern arrangement are successfully made. Displacements are reduced to 1/4 by adopting IP correction. The IP correction of EB data is found to be a useful method of reducing IP error.

Date Published: 8 November 2005
PDF: 12 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924R (8 November 2005); doi: 10.1117/12.630114

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)