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Proceedings Paper

Design, fabrication, and characterization of high-performance solar-blind AlGaN photodetectors
Author(s): Ekmel Ozbay
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Paper Abstract

Design, fabrication, and characterization of high-performance AlxGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.

Paper Details

Date Published: 25 October 2005
PDF: 14 pages
Proc. SPIE 6013, Optoelectronic Devices: Physics, Fabrication, and Application II, 601307 (25 October 2005); doi: 10.1117/12.630086
Show Author Affiliations
Ekmel Ozbay, Bilkent Univ. (Turkey)


Published in SPIE Proceedings Vol. 6013:
Optoelectronic Devices: Physics, Fabrication, and Application II
Joachim Piprek, Editor(s)

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