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Proceedings Paper

The effect of doping of rare earth elements on initial and sensibilized IR-photosensitivity of layered indium selenide crystals
Author(s): A. Sh. Abdinov; R. F. Babayeva; R. M. Rzayev; G. H. Eyvazova
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Paper Abstract

The effect of doping by rare earth elements (REE) such as Gd, Ho and Dy at NREE≈0≈10-1 at. % on initial, as well as sensibiized IR-photosensitivity in the crystals of layered semiconductor n-InSe have been investigated. It is shown that dependence of the initial and sensibilized IR-photosensitivity on the level of doping by REE in investigated InSe crystals is caused by dependence of a degree of spatial heterogeneity of a crystal, energy depth of shallow α-sticking levels and slow r-centers of recombination, and also densitity of shallow α-sticking levels on NREE.

Paper Details

Date Published: 7 June 2005
PDF: 5 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); doi: 10.1117/12.628875
Show Author Affiliations
A. Sh. Abdinov, Baku State Univ. (Azerbaijan)
R. F. Babayeva, Baku State Univ. (Azerbaijan)
R. M. Rzayev, Baku State Univ. (Azerbaijan)
G. H. Eyvazova, Baku State Univ. (Azerbaijan)

Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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