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Proceedings Paper

Epitaxial photosensitive Pb1-xSnxSe(In)/PbSe1-xSx heterojunctions obtained in the ultrahigh vacuum
Author(s): Eldar Yu. Salaev; A. M. Nazarov; S. I. Gadjieva
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Paper Abstract

Photosensitive isoperiodical heterojunctions (HJ) Pb1-xSnxSe(In)/PbSe1-xSx were obtained in the ultrahigh vacuum (≤3÷5•10-7 Pa) at quasi-equilibrium conditions by the method of the "hot wall" in the unified technological cycle on substrates BaF2. In structural relation HJ components are ideally coordinated pair for the epitaxy. Volt-ampere and spectral characteristics of the HJ were recorded. Straight branch of the volt-ampere characteristics satisfies to the exponential law J=J0exp (eU/βκT) at small displacements. At 77 K the coefficient β changes in the interval 1.5÷2 that is typical for the generation-recombination mechanism of the current leakage through the region of the space charge. Maximum photosensitivity was observed at λmax=12.0 μm. The increase of the temperature ofthe HJ manufacture leads to the shift of the photosensitivity maximum to the short-wave region that is explained by the noticeable tin diffusion from the ground layer to the growing layer and as a result the HJ acquires characteristics of the varyzone structure.

Paper Details

Date Published: 7 June 2005
PDF: 4 pages
Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005);
Show Author Affiliations
Eldar Yu. Salaev, Institute of Physics (Azerbaijan)
A. M. Nazarov, Institute of Physics (Azerbaijan)
S. I. Gadjieva, Institute of Physics (Azerbaijan)


Published in SPIE Proceedings Vol. 5834:
18th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachov; Vladimir P. Ponomarenko; Alexander I. Dirochka, Editor(s)

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