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Proceedings Paper

Effects of annealing on surface passivation of P-Type Hg1-xCdxTe grown by LPE
Author(s): Yan-Li Shi; Ying Yao; Yu-hui Su; Li Lv; Ying Tian; Jian-Cai Chen; Xiang-Hua Ma
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Paper Abstract

Experiments were designed for analyzing effects of annealing on surface properties of P-type Hg1-xCdxTe Liquid Phase Epitaxy (LPE) films. Owing to special surface characteristics of P-type Hg1-xCdxTe material, it is necessary and vital to obtain good passivation layer for both high performance photoconductive type and photovoltaic type Hg1-xCdxTe detectors. Variable magnetic-field Hall measurement was used to investigate surface properties in temperature range from 1.5 to 200 K for the annealed and unannealed samples. Different temperature behavior of Hall coefficient (RH) was observed for the two kinds of samples. Surface electrons were observed existing for unannealed samples judging by the low temperature characteristic of RH (below 10k). In addition to this, C-V measurement of MIS devices made of same annealed and unannealed sample was also used to analyze the effects of annealing. In the C-V measurement applied bias to which annealed samples could bear was larger than that to unannealed one. Meanwhile, fixed charge density in passivation layer of the annealed samples was smaller than that of the unannealed samples. The above results implied surface charge density on the surface of p-Hg1-xCdxTe material was reduced by annealing treatment comparing with that without annealing. On conclusion, annealing improved surface status of P-type Hg1-xCdxTe material.

Paper Details

Date Published: 14 October 2005
PDF: 10 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640Y (14 October 2005); doi: 10.1117/12.625008
Show Author Affiliations
Yan-Li Shi, Kunming Institute of Physics (China)
Ying Yao, Kunming Institute of Physics (China)
Yu-hui Su, Kunming Institute of Physics (China)
Li Lv, Kunming Institute of Physics (China)
Ying Tian, Kunming Institute of Physics (China)
Jian-Cai Chen, Kunming Institute of Physics (China)
Xiang-Hua Ma, Kunming Institute of Physics (China)


Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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