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Proceedings Paper

Magnetron reactive sputtering of TaN and TaON films for EUV mask applications
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Paper Abstract

We have developed and characterized a stack of TaN (absorber) and TaON (ARC) using reactive magnetron sputtering method. Two DOE (design of experiments) were performed with varying gas and power parameters and their effects on the various film parameters are discussed. We characterized the stress, uniformity, reflectivity (for defect inspection and EUV wavelengths), defect adders, and etch performance. Film property characterization was performed with AFM, Optical reflectance measurement tool, Particle inspection tool and profilometer. Optimized film stack met or exceeded ITRS guideline for EUV lithography mask with film stress less than 200MPa, inspection wavelength reflectivity at 9%, and thickness uniformity less than 5%. Defect adder number (< 0.5 / cm2) was a strong function of underlying film surface roughness and cleanliness of surface as well as deposition parameters.

Paper Details

Date Published: 7 November 2005
PDF: 7 pages
Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59922B (7 November 2005); doi: 10.1117/12.625006
Show Author Affiliations
Kyung M. Lee, Intel Corp. (United States)
Malahat Tavassoli, Intel Corp. (United States)
Alan Stivers, Intel Corp. (United States)
Barry Lieberman, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5992:
25th Annual BACUS Symposium on Photomask Technology
J. Tracy Weed; Patrick M. Martin, Editor(s)

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