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Proceedings Paper

Research on zinc diffusion in undoped InP
Author(s): ChunQuan Zhuang; YanQiu Lv; HaiMei Gong
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Paper Abstract

When Zinc diffuses into undoped InP, the diffusion profiles are severely influenced by the process parameters, such as the diffusion temperature, the diffusion time, etc. In order to reduce the surface damage and enhance reproducibility, the diffusion temperature and the diffusion time are optimized. Under optimized. diffusion temperature, curve of diffusion depth versus the square root of the diffusion time is achieved. From this curve, the diffusion coefficient for zinc under the optimized temperature is calculated. The zinc profile was determined by electrochemical capacitance-voltage profiling (ECV), according to which zinc diffusion mechanism was explained.

Paper Details

Date Published: 13 October 2005
PDF: 8 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596404 (13 October 2005); doi: 10.1117/12.624767
Show Author Affiliations
ChunQuan Zhuang, Shanghai Institute of Technical Physics, CAS (China)
YanQiu Lv, Shanghai Institute of Technical Physics, CAS (China)
HaiMei Gong, Shanghai Institute of Technical Physics, CAS (China)

Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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