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Proceedings Paper

Comparison of technology and laser properties of epitaxially grown 1.06 um and eye safe microchip laser
Author(s): Krzysztof Kopczynski; Jerzy Sarnecki; Jarosław Mlynczak; Zygmunt Mierczyk; Jerzy Skwarcz
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Paper Abstract

Most of the work on passively Q-switched microchip lasers emitting at 1064 nm has been done with neodymium-doped YAG crystals as gain material and Cr4+:YAG as saturable absorber. The bulk Cr4+:GGG Czochralski grown passive Q-switches were also investigated. We have used a technique of liquid phase epitaxy (LPE) to grow Cr4+:YAG, Cr4+:GGG and Co2+:YAG thin films of saturable absorber. X-ray diffraction analysis, optical transmission spectra measurements and passive Q-switching experiments were performed to characterize the obtained layers. Absorption saturation measurements of Cr4+:YAG, Cr4+:GGG and Co2+:YAG layers were carried out at 1.06 μm and 1.54 μm, respectively.

Paper Details

Date Published: 11 October 2005
PDF: 8 pages
Proc. SPIE 5958, Lasers and Applications, 59582E (11 October 2005); doi: 10.1117/12.623306
Show Author Affiliations
Krzysztof Kopczynski, Military Univ. of Technology (Poland)
Jerzy Sarnecki, Institute of Electronic Materials Technology (Poland)
Jarosław Mlynczak, Military Univ. of Technology (Poland)
Zygmunt Mierczyk, Military Univ. of Technology (Poland)
Jerzy Skwarcz, Institute of Electronic Materials Technology (Poland)

Published in SPIE Proceedings Vol. 5958:
Lasers and Applications
Krzysztof M. Abramski; Antonio Lapucci; Edward F. Plinski, Editor(s)

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