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Proceedings Paper

Cooled InAs photodiodes for IR applications
Author(s): A. Sukach; V. Tetyorkin; G. Olijnuk; V. Lukyanenko; A. Voroschenko
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Paper Abstract

InAs photodiodes were prepared by cadmium diffusion into substrates with n-type conductivity. Formation of compensated region with concentration of free carriers ~1015 cm-3 is proved from measurements of barrier capacitance and transport mechanisms. The trap-assisted tunneling current is calculated for InAs photodiodes for the fist time. In this paper we proposed a model of the trap-assisted tunneling current which is caused by nonuniform distribution of impurity atoms and native defects. The trap-assisted tunneling current is caused by small areas of the junction which are characterized by increased concentration of defects and may be associated with dislocations, periphery of the junction or impurity fluctuations. Diffused photodiodes have higher threshold parameters in comparison with commercially available ones. Also, they exhibit higher photosensitivity in the short wavelength region due to existence of the surface built-in electric field.

Paper Details

Date Published: 29 September 2005
PDF: 10 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59571A (29 September 2005); doi: 10.1117/12.622195
Show Author Affiliations
A. Sukach, Institute of Semiconductor Physics (Ukraine)
V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
G. Olijnuk, Institute of Semiconductor Physics (Ukraine)
V. Lukyanenko, Institute of Semiconductor Physics (Ukraine)
A. Voroschenko, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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