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Proceedings Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe
Author(s): A. Voitsekhovskii; S. Nesmelov; A. Kokhanenko; Yu. Sidorov; V. Varavin; S. Dvoretsky; N. Mikhailov; V. Vasiliev; Yu. Mashukov; T. Zakharyash
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Paper Abstract

The electro-physical and photo-electrical properties of the HgCdTe/SiO2/Si3N4 and HgCdTe/anodic-oxide film MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg0.78Cd0.22Te were produced on the GaAs substrates by molecular-beam epitaxy. It was established of features of electrical properties were related with conduction type of the semiconductor and to the presence of near-surface graded-band layers. The test measurements of the electro-physical and photoelectric performances of MIS-structures in base of graded-band HgCdTe are held and the following parameters are found: resistances of volume, voltage of flat bands, densities of mobile and fixed charges, spectrums of surface states. It is shown that low-temperature double insulator SiO2/Si3N4 is perspective for passivation of surface of focal plane arrays in base of HgCdTe-photodiodes.

Paper Details

Date Published: 29 September 2005
PDF: 7 pages
Proc. SPIE 5957, Infrared Photoelectronics, 595717 (29 September 2005); doi: 10.1117/12.622117
Show Author Affiliations
A. Voitsekhovskii, Tomsk State Univ. (Russia)
S. Nesmelov, Tomsk State Univ. (Russia)
A. Kokhanenko, Tomsk State Univ. (Russia)
Yu. Sidorov, Institute of Semiconductor Physics (Russia)
V. Varavin, Institute of Semiconductor Physics (Russia)
S. Dvoretsky, Institute of Semiconductor Physics (Russia)
N. Mikhailov, Institute of Semiconductor Physics (Russia)
V. Vasiliev, Institute of Semiconductor Physics (Russia)
Yu. Mashukov, Institute of Semiconductor Physics (Russia)
T. Zakharyash, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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