The electro-physical and photo-electrical properties of the HgCdTe/SiO₂/Si₃N₄ and HgCdTe/anodic-oxide film MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg_0.78Cd_0.22Te were produced on the GaAs substrates by molecular-beam epitaxy. It was established of features of electrical properties were related with conduction type of the semiconductor and to the presence of near-surface graded-band layers. The test measurements of the electro-physical and photoelectric performances of MIS-structures in base of graded-band HgCdTe are held and the following parameters are found: resistances of volume, voltage of flat bands, densities of mobile and fixed charges, spectrums of surface states. It is shown that low-temperature double insulator SiO₂/Si₃N₄ is perspective for passivation of surface of focal plane arrays in base of HgCdTe-photodiodes.

Date Published: 29 September 2005
PDF: 7 pages
Proc. SPIE 5957, Infrared Photoelectronics, 595717 (29 September 2005); doi: 10.1117/12.622117

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)