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Proceedings Paper

Study on p-type ZnO: a potential new source of solid state lighting
Author(s): Zhi Gen Yu; Ping Wu; Hao Gong
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Paper Abstract

Although GaN is widely applied in UV light emitting diodes (LEDs) and laser diodes (LDs) applications, its intrinsic properties may limits its potential in the development of large scale consumer products. ZnO, on the other hand, is a known potent candidate for UV-LEDs and LDs. However, it is very difficult to fabricate p-type ZnO because of a strong self-compensation effect of intrinsic defects. In this study, we shall discuss the growth conditions that favor p-type ZnO based on first principles density functional theory (DFT) calculations. Selection of doping source and the corresponding thin film fabrication techniques and experimental results will be discussed also.

Paper Details

Date Published: 13 September 2005
PDF: 7 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410E (13 September 2005); doi: 10.1117/12.617854
Show Author Affiliations
Zhi Gen Yu, Institute of High Performance Computing (Singapore)
National Univ. of Singapore (Singapore)
Ping Wu, Institute of High Performance Computing (Singapore)
Hao Gong, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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