Share Email Print

Proceedings Paper

Photomask process development for next generation lithography
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

For the coming technology nodes, lithography options that use 1X masks are becoming practical candidates. Especially the nano-imprint lithography (NIL) is expected as one of the candidates for 32nm node and below, because of its potential low lithography cost. Naturally, 1X masks require features finer than those on today's 4X masks, and for mask making this means a big and hard technology jump. From the mask making point of view, even the 1X mask is still a candidate, it would be a technology driver in terms of patterning process development for the coming nodes. In this paper, we focused on the NIL mold (or mask) making evaluation. Among the important factors dominating the resolution of the mask making process, we studied particularly on the resist and the dry etch. We found that with tools currently used in the commercial mask shops today, and by modification of resists, we could achieve 30nm isolated spaces and 50nm dense lines and holes. We also discuss about our initial results of mask EB writing method evaluation. We found that, to improve the resolution further, the implementation of high resolution EB tools into the mask manufacturing line is inevitable to made molds for 32nm or 22nm technology nodes.

Paper Details

Date Published: 28 June 2005
PDF: 12 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617462
Show Author Affiliations
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Kimio Itoh, Dai Nippon Printing Co., Ltd. (Japan)
Akiko Fujii, Dai Nippon Printing Co., Ltd. (Japan)
Nobuhito Toyama, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?