Share Email Print

Proceedings Paper

Interaction and balance of mask write time and design RET strategies
Author(s): Yuan Zhang; Rick Gray; O. Sam Nakagawa; Puneet Gupta; Henry Kamberian; Guangming Xiao; Rand Cottle; Chris Progler
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

It has been demonstrated that the write time for 50keV E-beam masks is a function of layout complexity including figure count, vertex count and total line edge. This study is aimed to improve model fitting by utilizing all the variables generated from CATS. A better correlation of R2 = 0.99 was achieved by including quadratic and interaction terms. The vertex model was then applied to estimate write time of various nano-imprint templates. Accuracy of the vertex model is much better than the numbers generated from E-beam tool software. A 90nm test layout was treated with a mask optimization (MO) algorithm. A 26% write time reduction was observed through shot count reduction. The advanced features of the new generation E-beam writing tool combined with mask layout optimization, allows the same level of mask cost even though the capital cost of the new tool set increased 25%.

Paper Details

Date Published: 28 June 2005
PDF: 5 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617146
Show Author Affiliations
Yuan Zhang, Photronics (United States)
Rick Gray, Photronics (United States)
O. Sam Nakagawa, Blaze DFM, Inc. (United States)
Puneet Gupta, Blaze DFM, Inc. (United States)
Henry Kamberian, Photronics (United States)
Guangming Xiao, Photronics (United States)
Rand Cottle, Photronics (United States)
Chris Progler, Photronics (United States)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?