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Proceedings Paper

Evaluation of e-beam sensitive CARs for advanced mask making
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Paper Abstract

An increasingly tighter set of mask specifications requires new equipment, process improvements, and improved e-beam resist materials. Resist profiles, footing behavior and line edge roughness (LER) have strong impacts on CD-uniformity, process bias and defect control. Additionally, the CD stability of e-beam resists in vacuum contributes to the final CD-uniformity as a systematic error. The resolution capability of the resist process is becoming increasingly important for slot contact like features, which are expected to be applied as clear assist features in contact hole layers at the sub 100nm technology node (1x)1. Three e-beam sensitive pCAR resists from different vendors were investigated in terms of resolution and pattern quality, PED stability, PEB sensitivity, dose latitude, CD-uniformity and line edge roughness. As reported here, all three pCARs showed improvements in all of these areas. Future work with these pCAR resists will focus on defect density, PCD, and CD uniformity.

Paper Details

Date Published: 28 June 2005
PDF: 10 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617111
Show Author Affiliations
Axel Feicke, Advanced Mask Technology Ctr. (Germany)
Mathias Irmscher, IMS Chips (Germany)
Anatol Schwersenz, IMS Chips (Germany)
Martin Tschinkl, Advanced Mask Technology Ctr. (Germany)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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