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Proceedings Paper

In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics
Author(s): E. Nolot; P. Mur; S. Favier
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Paper Abstract

The development of silicon nano-crystals (nc-Si or dots) technologies requires important characterization work, and till now suffers from the lack of non-invasive, in-line metrology to control the growth of dots. This paper reports the validation of a new in-line dots size and density characterization, achieved by coupling light scattering analysis and XRay reflectivity measurements. A set of nc-Si with density ranging from 1011 to 6x1011cm-2 and size from 9 to 13nm was grown on Al2O3 / HfO2 stacks and used to validate the correlation between light scattering and dot density, and the correlation between X-Ray reflectivity and dot size. This fast (<10 minutes per wafer) in-line protocol gives very encouraging results, being in good agreement with Scanning Electron Microscopy off-line measurements.

Paper Details

Date Published: 31 August 2005
PDF: 8 pages
Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 587805 (31 August 2005); doi: 10.1117/12.616820
Show Author Affiliations
E. Nolot, CEA-DRT (France)
P. Mur, CEA-DRT (France)
S. Favier, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 5878:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II
Angela Duparre; Bhanwar Singh; Zu-Han Gu, Editor(s)

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