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Proceedings Paper

New configuration of channeled spectropolarimeter for snapshot polarimetric measurement of materials
Author(s): Hiroshi Okabe; Kenichi Matoba; Masayuki Hayakawa; Atsushi Taniguchi; Kazuhiko Oka; Hitoshi Naito; Nobuo Nakatsuka
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Paper Abstract

A novel configuration for the channeled spectroscopic ellipsometer (CSE) is presented. The channeled spectroscopic ellipsometry is a snapshot method for the spectrally-resolved polarization analysis. In this method, multiple-order retarders are utilized to generate a channeled spectrum carrying information about the wavelength-dependent multiple parameters of polarization of light. This method has a feature that it requires no mechanical or active components for polarization-control, such as a rotating compensator and an electro-optic modulator. In spite of these advantages, however, the previously proposed configuration of the CSE has a drawback that it is susceptible to the ray-direction variation introduced by the angular fluctuation of the ellipsometric sample. To overcome this drawback, an alternative configuration for the CSE has been developed. In this configuration, the multiple-order retarders are inserted between a light source and a sample, so that the measured results are not affected by the fluctuations due to the reflection from the sample. A compact sensing head whose size is 160mm(W)×53mm(H)×30mm(D) was realized using the new configuration, and applied for the snapshot measurement of the SiO2 films deposited on a Si substrate, with the acquisition time of 20 ms. The measured thicknesses of the SiO2 films are almost agree with the results from the rotating-compensator ellipsometer. The configuration that has the multiple-order retarders in the polarization-generating section can apply to other spectroscopic polarimeters to remove the influence of the ray-direction fluctuations due to the reflection or transmission from the sample.

Paper Details

Date Published: 31 August 2005
PDF: 8 pages
Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780H (31 August 2005); doi: 10.1117/12.616298
Show Author Affiliations
Hiroshi Okabe, Omron Corp. (Japan)
Kenichi Matoba, Omron Corp. (Japan)
Masayuki Hayakawa, Omron Corp. (Japan)
Atsushi Taniguchi, Hokkaido Univ. (Japan)
Kazuhiko Oka, Hokkaido Univ. (Japan)
Hitoshi Naito, Omron Corp. (Japan)
Nobuo Nakatsuka, Omron Corp. (Japan)

Published in SPIE Proceedings Vol. 5878:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II
Angela Duparre; Bhanwar Singh; Zu-Han Gu, Editor(s)

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