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Proceedings Paper

Analysis of short-channel effects in organic field-effect transistors
Author(s): Joshua N. Haddock; Xiaohong Zhang; Shijun Zheng; Seth R. Marder; Bernard Kippelen
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Paper Abstract

We present a comprehensive study of short channel effects in organic field-effect transistors by measuring the electrical characteristics of devices with fixed channel width and varying channel length. Our studies are conducted on a p-type organic semiconductor, (E,E-2,5-bis-{4'-bis-(4''-methoxy-phenyl)amino-styryl}-3,4-ethylenedioxy-thiophene that is spin-coated from solution to form bottom contact organic field-effect transistors. Drain-source currents from transistors with a channel length of 50 μm show excellent agreement with the square law equations derived for crystalline Si MOSFETs in both the linear and saturation regimes. As the channel length is incrementally reduced to 1 μm, device characteristics such as saturation regime channel conductance, sub-threshold current and threshold voltage, behave in a manner similar to Si MOSFETs of decreasing channel length. Results of these studies indicate the presence of non-destructive current punch-through and in addition, both channel-length modulation and threshold-voltage roll-off, neither of which have previously been reported in OFETs.

Paper Details

Date Published: 21 September 2005
PDF: 11 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400H (21 September 2005); doi: 10.1117/12.615434
Show Author Affiliations
Joshua N. Haddock, Georgia Institute of Technology (United States)
Xiaohong Zhang, Georgia Institute of Technology (United States)
Shijun Zheng, Georgia Institute of Technology (United States)
Seth R. Marder, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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