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Proceedings Paper

Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling
Author(s): Yegao Xiao; Ishwara Bhat; M. Nurul Abedin
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Paper Abstract

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Paper Details

Date Published: 12 September 2005
PDF: 10 pages
Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810R (12 September 2005); doi: 10.1117/12.615057
Show Author Affiliations
Yegao Xiao, Rensselaer Polytechnic Institute (United States)
Ishwara Bhat, Rensselaer Polytechnic Institute (United States)
M. Nurul Abedin, NASA Langley Research Ctr. (United States)

Published in SPIE Proceedings Vol. 5881:
Infrared and Photoelectronic Imagers and Detector Devices
Randolph E. Longshore, Editor(s)

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