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Proceedings Paper

ZnO doping by ion implantation
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Paper Abstract

Preliminary studies on ZnO single crystals implanted with In (donor), As (acceptor) and 111Ag (acceptor) are presented. Each dopants electronic structure was investigated by means of positron annihilation lifetime (PALS) and photoluminescence (PL) measurements. For some of the crystals, the lifetime spectra revealed the presence of effective positron traps. Moreover, for all samples the luminescence spectra consist of a near-band-edge (NBE) and a deep-level (DL) emission. The observed trends will be discussed in terms of the origin, nature and charge state of the induced defects involved.

Paper Details

Date Published: 31 August 2005
PDF: 6 pages
Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220X (31 August 2005); doi: 10.1117/12.615000
Show Author Affiliations
M. A. Hernandez-Fenollosa, Univ. Politecnica de Valencia (Spain)
E. Rita, Ctr. de Fisica Nuclear da Univ. de Lisboa (Portugal)
Instituto Tecnologico e Nuclear (Portugal)
L. C. Damonte, Univ. Politecnica de Valencia (Spain)


Published in SPIE Proceedings Vol. 5922:
Hard X-Ray and Gamma-Ray Detector Physics VII
Ralph B. James; Larry A. Franks; Arnold Burger, Editor(s)

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