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Proceedings Paper

Characterization of dual-band infrared detectors for application to remote sensing
Author(s): M. Nurul Abedin; Tamer F. Refaat; Yegao Xiao; Ishwara Bhat
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Paper Abstract

NASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.

Paper Details

Date Published: 29 August 2005
PDF: 8 pages
Proc. SPIE 5883, Infrared Spaceborne Remote Sensing 2005, 588307 (29 August 2005); doi: 10.1117/12.614938
Show Author Affiliations
M. Nurul Abedin, NASA Langley Research Ctr. (United States)
Tamer F. Refaat, Science and Technology Corp. (United States)
Yegao Xiao, Rensselaer Polytechnic Institute (United States)
Ishwara Bhat, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 5883:
Infrared Spaceborne Remote Sensing 2005
Marija Strojnik, Editor(s)

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