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Proceedings Paper

Determination of the optical properties of thin absorbing layers with spectroscopic ellipsometry and interferometric microscopy
Author(s): A. Kudla; L. Borowicz
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Paper Abstract

The idea of simultaneously using spectroscopic ellipsometry and interferometric microscopy for optical properties determination of thin absorbing layer is presented. Spectroscopic ellipsometry is a powerful method for thicknesses and refraction index determination, but in the case of thin absorbing layer a verification method is very useful. Such verification could be done with interferometric method. With interferometry a phase shift can be observed between two adjacent areas with different heights and/or optical properties. This phase shift can be accurately calculated with same model which is used for ellipsometry data analysis. Proposed method is most effective for metal-insulator-semiconductor structure with thin semitransparent metal layer. For this structure phase shift and sensitivity to metal thickness and optical indexes can be adjusted by preparing substrate with suitable dielectric layer thickness. Method is illustrated with spectroscopic ellipsometry and interferometry measurements on Al-SiO2-Si structure.

Paper Details

Date Published: 29 August 2005
PDF: 9 pages
Proc. SPIE 5858, Nano- and Micro-Metrology, 58580F (29 August 2005); doi: 10.1117/12.612629
Show Author Affiliations
A. Kudla, Institute of Electron Technology (Poland)
L. Borowicz, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 5858:
Nano- and Micro-Metrology
Heidi Ottevaere; Peter DeWolf; Diederik S. Wiersma, Editor(s)

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