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Proceedings Paper

Variation of generation-recombination noise density with 300 K background flux in epitaxial LWIR Hg1-xCdxTe photoconductors having three-layer light absorbing configuration
Author(s): Galina V. Chekanova; Albina A. Drugova; Alexander V. Kurbatov; Mikhail S. Nikitin
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Paper Abstract

Spectral density of "generation-recombination" noise voltage <δV2gr> ("g-r noise") in photoconductive Hg1-xCdxTe infrared radiation detectors with absorber n-Hg1-xCdxTe layer was calculated. Variations of <δV2gr> with doping level (n ≈ Nd), ambient background flux density (Qbgr, Tbgr ≈ 300 K), electrical bias (Vb/Ib) and pixel active area were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV2gr,th> and excess charge carriers exited by background photons <δV2gr,bgr> and Johnson-Nyquist noise <δV2JN> were examined in small active area (30 μm x 30 μm and 50 μm x 50 μm) Hg1-xCdxTe photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λp ≤ 12 μm at operating temperature Top ≈ 78 K. Measured dependencies of g-r noise voltage spectral density have confirmed BLIP mode of photoconductors up to FOV=10 degrees where D*(λp) exceed 2x1011 Jones.

Paper Details

Date Published: 23 May 2005
PDF: 12 pages
Proc. SPIE 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III, (23 May 2005); doi: 10.1117/12.609588
Show Author Affiliations
Galina V. Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Albina A. Drugova, Institute of Radio Engineering and Electronics (Russia)
Alexander V. Kurbatov, Federal State Unitary Enterprise ALPHA (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)

Published in SPIE Proceedings Vol. 5846:
Noise and Information in Nanoelectronics, Sensors, and Standards III
Janos A. Bergou; Janusz M. Smulko; Mark I. Dykman; Lijun Wang, Editor(s)

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