Share Email Print

Proceedings Paper

Plasma activated wafer bonding for MEMS
Author(s): V. Dragoi; S. Farrens; P. Lindner
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Wafer bonding became a key technology in various MEMS devices manufacturing. In this respect, wafer bonding is a very important technology as far as it enables not only 3D structure building but also wafer level packaging. Plasma activated wafer bonding is a surface activation method in which by applying a plasma treatment to the wafers prior to bringing them in contact for bonding, the surface chemistry can be tailored in order to obtain maximum bond strength for low temperature thermal annealing. A major advantage of this process is that it makes possible some bonding applications which are not possible using standard bonding processes due to different materials characteristics (e.g. high thermal mismatch of the two bonding partners, low Tg for polymer bonds, etc.) Plasma activated bonding was successfully applied for different types of materials: silicon, compound semiconductors, oxides and polymers (e.g. PMMA). The present paper presents experimental results demonstrating the benefits of this new technology and shows examples on how plasma activated wafer bonding can be an alternative to standard wafer bonding processes.

Paper Details

Date Published: 1 July 2005
PDF: 9 pages
Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); doi: 10.1117/12.608788
Show Author Affiliations
V. Dragoi, EV Group E. Thallner GmbH (Austria)
S. Farrens, EV Group E. Thallner GmbH (Austria)
P. Lindner, EV Group E. Thallner GmbH (Austria)

Published in SPIE Proceedings Vol. 5836:
Smart Sensors, Actuators, and MEMS II
Carles Cane; Jung-Chih Chiao; Fernando Vidal Verdu, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?