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Proceedings Paper

A novel suspended gate MOSFET pressure sensor
Author(s): Jose A. Segovia; Montserrat Fernandez-Bolanos; Jose M. Quero
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Paper Abstract

A novel pressure sensor based on a Suspended Gate MOSFET is presented. The SG-MOSFET structure, fabricated in a SOI wafer, is modified by etching the bulk of the wafer back side in order to create a thin clamped membrane and to be able to measure pressure displacements. The whole structure forms a diaphragm, in which the bottom plate is a pressure sensitive terminal and the top plate forms the MOSFET gate terminal where the air-gap is proportional to the pressure application as gate insulator. The change of this air-gap distance modifies the drain current of the sensing MOSFET. The gate is suspended by arms allowing to modify the sensitivity of this sensor by a drive voltage. Two operation modes are proposed, one uses the drain current variations as output signal and the second one take advantage of the snap down effect. A model along with Finite Element Method simulations were made to provide a design model for the pressure sensor. Some pressure sensors were been fabricated with different dimensions.

Paper Details

Date Published: 1 July 2005
PDF: 8 pages
Proc. SPIE 5836, Smart Sensors, Actuators, and MEMS II, (1 July 2005); doi: 10.1117/12.608718
Show Author Affiliations
Jose A. Segovia, Univ. de Sevilla (Spain)
Montserrat Fernandez-Bolanos, Univ. de Sevilla (Spain)
Jose M. Quero, Univ. de Sevilla (Spain)

Published in SPIE Proceedings Vol. 5836:
Smart Sensors, Actuators, and MEMS II
Carles Cane; Jung-Chih Chiao; Fernando Vidal Verdu, Editor(s)

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