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Proceedings Paper

Carrier dynamics in quantum dot lasers
Author(s): A. Fiore; A. Markus; M. Rossetti
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Paper Abstract

We analyze the impact of slow intraband relaxation and strong carrier localization on the characteristics of quantum dot (QD) lasers. Relatively long intraband relaxation times and population filling of the QD ground state lead to carrier pile-up on excited states, reducing the laser efficiency and maximum output power. Strong carrier localization in the QDs and consequently large thermal hopping time within the QD ensemble results in the absence of quasi-thermal equilibrium under lasing conditions, as evidenced by stimulated and spontaneous emission spectra. The impact of these specific physical characteristics of QD active regions on the laser high-frequency modulation properties is analyzed, particularly with regards to the differential gain, the gain compression and the linewidth enhancement factors.

Paper Details

Date Published: 7 July 2005
PDF: 10 pages
Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); doi: 10.1117/12.608478
Show Author Affiliations
A. Fiore, Ecole Polytechnique Federale de Lausanne (Switzerland)
A. Markus, Ecole Polytechnique Federale de Lausanne (Switzerland)
M. Rossetti, Ecole Polytechnique Federale de Lausanne (Switzerland)

Published in SPIE Proceedings Vol. 5840:
Photonic Materials, Devices, and Applications
Goncal Badenes; Derek Abbott; Ali Serpenguzel, Editor(s)

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