Share Email Print

Proceedings Paper

Visible photoluminescence originated from various mechanisms during step-by-step annealing
Author(s): Jiaxin Mei; Yunjun Rui; Ling Yang; Jun Xu; Zhongyuan Ma; Da Zhu; Xinfan Huang; Kunji Chen
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Light emission variated from violet-blue to red-infrared is observed from a-Si:/SiO2 multilayers during step by step annealing. The peak of photoluminescence (PL) changes in the range between 417nm and 750nm under excitation of 325nm light as a function of annealing temperature, which is strong enough to be observed by naked eyes. Combined with Fourier Transform Infrared (FTIR) measurements, the correlation of the red PL excited by 488nm Ar+ laser and the structural evolution during the step by step annealing is detailed studied. The origins of different PL bands and the role of hydrogen and oxygen in microstructures of a-Si:/SiO2 multilayers are discussed

Paper Details

Date Published: 8 December 2004
PDF: 4 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608168
Show Author Affiliations
Jiaxin Mei, Nanjing Univ. (China)
Yunjun Rui, Nanjing Univ. (China)
Ling Yang, Nanjing Univ. (China)
Jun Xu, Nanjing Univ. (China)
Zhongyuan Ma, Nanjing Univ. (China)
Da Zhu, Nanjing Univ. (China)
Xinfan Huang, Nanjing Univ. (China)
Kunji Chen, Nanjing Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?