Share Email Print

Proceedings Paper

Formation mechanism of the VO2 polycrystalline film prepared by modified-ion-beam enhanced deposition
Author(s): Jinhua Li; Ningyi Yuan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A new method of modified Ion Beam Enhanced Deposition (IBED) was designed to form VO2 polycrystalline film with good properties. While argon ion beam sputtered V2O5 powder target to deposit vanadium oxide film, a high current Ar+/H+ mixing beam with a high dose was implanted into the deposited film. The VO2 film with the Temperature Coefficient of Resistance (TCR) as high as 4%/K was obtained after subsequent appropriate annealing at the temperature above 500°C. The formation mechanism of the IBED VO2 film was discussed as following: the damage effect of the argon ion beam implantation broken some of V-O bands; The deoxidization effect of implanted hydrogen reduced V2O5 to VO2. The mixing effect could make IBED film adhere to the substrate firmly. The doping effect of the implanted argon introduced stress in the film to decrease the phase transition temperature. The bombardment effect made the film more compact, decreased oxygen vacancy density, reduced the grain boundary width, and increased the TCR of the IBED VO2 polycrystalline films.

Paper Details

Date Published: 8 December 2004
PDF: 5 pages
Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607752
Show Author Affiliations
Jinhua Li, Jiangsu Polytechnic Univ. (China)
Ningyi Yuan, Jiangsu Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 5774:
Fifth International Conference on Thin Film Physics and Applications
Junhao Chu; Zongsheng Lai; Lianwei Wang; Shaohui Xu, Editor(s)

© SPIE. Terms of Use
Back to Top